Spin-dependent resonant tunneling in symmetrical double-barrier structure

摘要

A theory of resonant spin-dependent tunneling has been developed forsymmetrical double-barrier structures grown of non-centrosymmetricalsemiconductors. The dependence of the tunneling transparency on the spinorientation and the wave vector of electrons leads to (i) spin polarization ofthe transmitted carriers in an in-plane electric field, (ii) generation of anin-plane electric current under tunneling of spin-polarized carriers. Theseeffects originated from spin-orbit coupling-induced splitting of the resonantlevel have been considered for double-barrier tunneling structures.